Zn1-xcdxse (X=0.2-0.3) single-quantum-well laser diodes without gaas buffer layers

Shigeo Hayashi; Ayumu Tsujimura; Shigeo Yoshii; Kazuhiro Ohkawa; Mitsuyu Tsuneo

doi:10.1143/JJAP.31.L1478

Zn_1-xcd_xse (X=0.2-0.3) single-quantum-well laser diodes without gaas buffer layers

Shigeo Hayashi, Ayumu Tsujimura, Shigeo Yoshii, Kazuhiro Ohkawa, Mitsuyu Tsuneo

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm². The output power from the lasers exceeded 100 mW per facet.

Original language	English (US)
Pages (from-to)	L1478-L1480
Journal	Japanese Journal of Applied Physics
Volume	31
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.31.L1478
State	Published - Oct 1992
Externally published	Yes

Keywords

Blue-green laser diodes
Buffer layer
Cl doping
Green laser diodes
Nitrogen radical doping
ZnSe
Zncdse

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.31.L1478

Cite this

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title = "Zn1-xcdxse (X=0.2-0.3) single-quantum-well laser diodes without gaas buffer layers",

abstract = "Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm2. The output power from the lasers exceeded 100 mW per facet.",

keywords = "Blue-green laser diodes, Buffer layer, Cl doping, Green laser diodes, Nitrogen radical doping, ZnSe, Zncdse",

author = "Shigeo Hayashi and Ayumu Tsujimura and Shigeo Yoshii and Kazuhiro Ohkawa and Mitsuyu Tsuneo",

year = "1992",

month = oct,

doi = "10.1143/JJAP.31.L1478",

language = "English (US)",

volume = "31",

pages = "L1478--L1480",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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T1 - Zn1-xcdxse (X=0.2-0.3) single-quantum-well laser diodes without gaas buffer layers

AU - Hayashi, Shigeo

AU - Tsujimura, Ayumu

AU - Yoshii, Shigeo

AU - Ohkawa, Kazuhiro

AU - Tsuneo, Mitsuyu

PY - 1992/10

Y1 - 1992/10

N2 - Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm2. The output power from the lasers exceeded 100 mW per facet.

AB - Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm2. The output power from the lasers exceeded 100 mW per facet.

KW - Blue-green laser diodes

KW - Buffer layer

KW - Cl doping

KW - Green laser diodes

KW - Nitrogen radical doping

KW - ZnSe

KW - Zncdse

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U2 - 10.1143/JJAP.31.L1478

DO - 10.1143/JJAP.31.L1478

M3 - Article

AN - SCOPUS:4243426932

SN - 0021-4922

VL - 31

SP - L1478-L1480

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -