ZnSe-based laser diodes and p-type doping of ZnSe

K. Ohkawa; A. Tsujimura; S. Hayashi; S. Yoshii; T. Mitsuyu

doi:10.1016/0921-4526(93)90224-T

ZnSe-based laser diodes and p-type doping of ZnSe

K. Ohkawa^*, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N₂ metastables in the A³Σ⁺_u state. The free-hole concentration of N-doped ZnSe is of the order of 10¹⁷ cm^-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm² under pulsed operation.

Original language	English (US)
Pages (from-to)	112-117
Number of pages	6
Journal	Physica B: Physics of Condensed Matter
Volume	185
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(93)90224-T
State	Published - Apr 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/0921-4526(93)90224-T

Cite this

@article{a399fb5e21cf4000bb5ebfaa9758fc7f,

title = "ZnSe-based laser diodes and p-type doping of ZnSe",

abstract = "Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N2 metastables in the A3Σ+u state. The free-hole concentration of N-doped ZnSe is of the order of 1017 cm-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm2 under pulsed operation.",

author = "K. Ohkawa and A. Tsujimura and S. Hayashi and S. Yoshii and T. Mitsuyu",

year = "1993",

month = apr,

doi = "10.1016/0921-4526(93)90224-T",

language = "English (US)",

volume = "185",

pages = "112--117",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - ZnSe-based laser diodes and p-type doping of ZnSe

AU - Ohkawa, K.

AU - Tsujimura, A.

AU - Hayashi, S.

AU - Yoshii, S.

AU - Mitsuyu, T.

PY - 1993/4

Y1 - 1993/4

N2 - Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N2 metastables in the A3Σ+u state. The free-hole concentration of N-doped ZnSe is of the order of 1017 cm-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm2 under pulsed operation.

AB - Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N2 metastables in the A3Σ+u state. The free-hole concentration of N-doped ZnSe is of the order of 1017 cm-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm2 under pulsed operation.

UR - http://www.scopus.com/inward/record.url?scp=0027577676&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(93)90224-T

DO - 10.1016/0921-4526(93)90224-T

M3 - Article

AN - SCOPUS:0027577676

SN - 0921-4526

VL - 185

SP - 112

EP - 117

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-4

ER -

ZnSe-based laser diodes and p-type doping of ZnSe

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this