Znse-based diode lasers with stripe-geometry fabricated by ion bombardment

Shigeo Yoshii; Shigeo Hayashi; Ayumu Tsujimura; Kazuhiro Ohkawa; Tsuneo Mltsuyu; Hidemi Takeishi; Yasuhito Takahashi; Tadashi Narusawa

doi:10.1143/JJAP.32.L1753

Znse-based diode lasers with stripe-geometry fabricated by ion bombardment

Shigeo Yoshii, Shigeo Hayashi, Ayumu Tsujimura, Kazuhiro Ohkawa, Tsuneo Mltsuyu, Hidemi Takeishi, Yasuhito Takahashi, Tadashi Narusawa

Research output: Contribution to journal › Article › peer-review

Abstract

Current confinement of ZnSe-based diode lasers on p-GaAs substrates has been achieved by ion bombardment. Nitrogen ions were used for the bombardment to produce a high-resistivity region in n-Zn(S)Se cladding layer. The threshold current was reduced by one-third with the introduction of this current-blocking region. The devices showed laser action up to 150 K under pulsed current injection.

Original language	English (US)
Pages (from-to)	L1753-L1755
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	12 A
DOIs	https://doi.org/10.1143/JJAP.32.L1753
State	Published - Dec 1993
Externally published	Yes

Keywords

Far-field pattern
Ion bombardment
Semiconductor lasers
Threshold current
ZnCdSe
ZnSSe
ZnSe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.32.L1753

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title = "Znse-based diode lasers with stripe-geometry fabricated by ion bombardment",

abstract = "Current confinement of ZnSe-based diode lasers on p-GaAs substrates has been achieved by ion bombardment. Nitrogen ions were used for the bombardment to produce a high-resistivity region in n-Zn(S)Se cladding layer. The threshold current was reduced by one-third with the introduction of this current-blocking region. The devices showed laser action up to 150 K under pulsed current injection.",

keywords = "Far-field pattern, Ion bombardment, Semiconductor lasers, Threshold current, ZnCdSe, ZnSSe, ZnSe",

author = "Shigeo Yoshii and Shigeo Hayashi and Ayumu Tsujimura and Kazuhiro Ohkawa and Tsuneo Mltsuyu and Hidemi Takeishi and Yasuhito Takahashi and Tadashi Narusawa",

year = "1993",

month = dec,

doi = "10.1143/JJAP.32.L1753",

language = "English (US)",

volume = "32",

pages = "L1753--L1755",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Znse-based diode lasers with stripe-geometry fabricated by ion bombardment

AU - Yoshii, Shigeo

AU - Hayashi, Shigeo

AU - Tsujimura, Ayumu

AU - Ohkawa, Kazuhiro

AU - Mltsuyu, Tsuneo

AU - Takeishi, Hidemi

AU - Takahashi, Yasuhito

AU - Narusawa, Tadashi

PY - 1993/12

Y1 - 1993/12

N2 - Current confinement of ZnSe-based diode lasers on p-GaAs substrates has been achieved by ion bombardment. Nitrogen ions were used for the bombardment to produce a high-resistivity region in n-Zn(S)Se cladding layer. The threshold current was reduced by one-third with the introduction of this current-blocking region. The devices showed laser action up to 150 K under pulsed current injection.

AB - Current confinement of ZnSe-based diode lasers on p-GaAs substrates has been achieved by ion bombardment. Nitrogen ions were used for the bombardment to produce a high-resistivity region in n-Zn(S)Se cladding layer. The threshold current was reduced by one-third with the introduction of this current-blocking region. The devices showed laser action up to 150 K under pulsed current injection.

KW - Far-field pattern

KW - Ion bombardment

KW - Semiconductor lasers

KW - Threshold current

KW - ZnCdSe

KW - ZnSSe

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=0027352965&partnerID=8YFLogxK

U2 - 10.1143/JJAP.32.L1753

DO - 10.1143/JJAP.32.L1753

M3 - Article

AN - SCOPUS:0027352965

SN - 0021-4922

VL - 32

SP - L1753-L1755

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 A

ER -

Znse-based diode lasers with stripe-geometry fabricated by ion bombardment

Abstract

Keywords

ASJC Scopus subject areas

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