ZnO low-dimensional structures: Electrical properties measured inside a transmission electron microscope

Pedro M.F.J. Costa*, Dmitri Golberg, Guozhen Shen, Masanori Mitome, Yoshio Bando

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


The electrical properties of wurtzite-type ZnO low-dimensional structures were analysed using a scanning tunnelling microscopy (STM) in situ holder for transmission electron microscopes (TEM). Compared to similar studies in the literature employing nanowires or nanobelts, our work illustrates that rather complex structures can be reliably analysed with this technique. Through controlled contact manipulations it was possible to alter the systems I-V characteristics and, in separate experiments, to follow their electrical response to cycles of induced stress. Analysis of the I-V curves showed higher than expected resistances which, according to the detailed TEM characterisation, could be correlated with the considerable density of defects present. These defects accumulate in specific areas of the complex structural arrays of ZnO and represent high resistance points responsible for structural failure, when the systems are subjected to extreme current flows.

Original languageEnglish (US)
Pages (from-to)1460-1470
Number of pages11
JournalJournal of Materials Science
Issue number4
StatePublished - Feb 2008
Externally publishedYes

ASJC Scopus subject areas

  • Mechanics of Materials
  • Ceramics and Composites
  • Mechanical Engineering
  • Polymers and Plastics
  • General Materials Science
  • Materials Science (miscellaneous)


Dive into the research topics of 'ZnO low-dimensional structures: Electrical properties measured inside a transmission electron microscope'. Together they form a unique fingerprint.

Cite this