Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

A. Myzaferi; Asad J. Mughal; Daniel A. Cohen; Robert M. Farrell; Shuji Nakamura; James S. Speck; Steven P. DenBaars

doi:10.1364/oe.26.012490

Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

A. Myzaferi, Asad J. Mughal, Daniel A. Cohen, Robert M. Farrell, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.

Original language	English (US)
Pages (from-to)	12490
Journal	Optics Express
Volume	26
Issue number	10
DOIs	https://doi.org/10.1364/oe.26.012490
State	Published - May 1 2018
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1720256).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{3e4c945e8dbe41c8896ce934450a7ad3,

title = "Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes",

abstract = "We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.",

author = "A. Myzaferi and Mughal, {Asad J.} and Cohen, {Daniel A.} and Farrell, {Robert M.} and Shuji Nakamura and Speck, {James S.} and DenBaars, {Steven P.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1720256). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2018",

month = may,

day = "1",

doi = "10.1364/oe.26.012490",

language = "English (US)",

volume = "26",

pages = "12490",

journal = "Optics Express",

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publisher = "Optica Publishing Group",

number = "10",

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TY - JOUR

T1 - Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

AU - Myzaferi, A.

AU - Mughal, Asad J.

AU - Cohen, Daniel A.

AU - Farrell, Robert M.

AU - Nakamura, Shuji

AU - Speck, James S.

AU - DenBaars, Steven P.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1720256). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.

AB - We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.

UR - http://hdl.handle.net/10754/629768

UR - https://www.osapublishing.org/abstract.cfm?URI=oe-26-10-12490

UR - http://www.scopus.com/inward/record.url?scp=85047083849&partnerID=8YFLogxK

U2 - 10.1364/oe.26.012490

DO - 10.1364/oe.26.012490

M3 - Article

SN - 1094-4087

VL - 26

SP - 12490

JO - Optics Express

JF - Optics Express

IS - 10

ER -

Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

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