Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

A. Myzaferi, Asad J. Mughal, Daniel A. Cohen, Robert M. Farrell, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.
Original languageEnglish (US)
Pages (from-to)12490
JournalOptics Express
Volume26
Issue number10
DOIs
StatePublished - May 1 2018
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1720256).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

Fingerprint

Dive into the research topics of 'Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes'. Together they form a unique fingerprint.

Cite this