Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

Nazek El-Atab; Ayman Rizk; Ali K. Okyay; Ammar Nayfeh

doi:10.1063/1.4832237

Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

Nazek El-Atab, Ayman Rizk, Ali K. Okyay, Ammar Nayfeh

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO₂ layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V_t) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V _t shift, the memory with CrO₂ layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO₂ layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

Original language	English (US)
Article number	112116
Journal	AIP ADVANCES
Volume	3
Issue number	11
DOIs	https://doi.org/10.1063/1.4832237
State	Published - Nov 2013

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4832237

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title = "Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer",

abstract = "A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V t shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.",

author = "Nazek El-Atab and Ayman Rizk and Okyay, {Ali K.} and Ammar Nayfeh",

year = "2013",

month = nov,

doi = "10.1063/1.4832237",

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journal = "AIP ADVANCES",

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T1 - Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

AU - El-Atab, Nazek

AU - Rizk, Ayman

AU - Okyay, Ali K.

AU - Nayfeh, Ammar

PY - 2013/11

Y1 - 2013/11

N2 - A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V t shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

AB - A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V t shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

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DO - 10.1063/1.4832237

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VL - 3

JO - AIP ADVANCES

JF - AIP ADVANCES

IS - 11

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ER -

Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

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