Z-contrast imaging of dislocation cores at the GaAs/Si interface

S. Lopatin*, S. J. Pennycook, J. Narayan, G. Duscher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs without simulation. Three different types of dislocations were identified. As expected, a dangling bond was found in the atomic structure of the 60° dislocation. One of the observed 90° dislocations had the reconstructed atomic core structure (with no dangling bonds). The core structure of the other 90° dislocation exhibited a dangling bond.

Original languageEnglish (US)
Pages (from-to)2728-2730
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Oct 7 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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