Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface

S. Lopatin; G. Duscher; S. J. Pennycook; M. F. Chisholm

doi:10.1557/proc-744-m1.6

Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface

S. Lopatin^*, G. Duscher, S. J. Pennycook, M. F. Chisholm

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs. Electron energy loss spectroscopy (EELS) yields correlation between structure and chemistry. Different types of dislocation were identified at the Si/GaAs interface. Atomic structure of non-reconstructed 90° dislocation (exhibiting a dangling bond) is refined by means of computer simulations based on functional density theory. EELS form planar Si/GaAs interface and dislocation cores obtained and analyzed.

Original language	English (US)
Pages (from-to)	25-28
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	744
DOIs	https://doi.org/10.1557/proc-744-m1.6
State	Published - 2002
Externally published	Yes
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: Dec 2 2002 → Dec 5 2002

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

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title = "Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface",

abstract = "The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs. Electron energy loss spectroscopy (EELS) yields correlation between structure and chemistry. Different types of dislocation were identified at the Si/GaAs interface. Atomic structure of non-reconstructed 90° dislocation (exhibiting a dangling bond) is refined by means of computer simulations based on functional density theory. EELS form planar Si/GaAs interface and dislocation cores obtained and analyzed.",

author = "S. Lopatin and G. Duscher and Pennycook, {S. J.} and Chisholm, {M. F.}",

year = "2002",

doi = "10.1557/proc-744-m1.6",

language = "English (US)",

volume = "744",

pages = "25--28",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

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TY - JOUR

T1 - Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface

AU - Lopatin, S.

AU - Duscher, G.

AU - Pennycook, S. J.

AU - Chisholm, M. F.

PY - 2002

Y1 - 2002

N2 - The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs. Electron energy loss spectroscopy (EELS) yields correlation between structure and chemistry. Different types of dislocation were identified at the Si/GaAs interface. Atomic structure of non-reconstructed 90° dislocation (exhibiting a dangling bond) is refined by means of computer simulations based on functional density theory. EELS form planar Si/GaAs interface and dislocation cores obtained and analyzed.

AB - The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs. Electron energy loss spectroscopy (EELS) yields correlation between structure and chemistry. Different types of dislocation were identified at the Si/GaAs interface. Atomic structure of non-reconstructed 90° dislocation (exhibiting a dangling bond) is refined by means of computer simulations based on functional density theory. EELS form planar Si/GaAs interface and dislocation cores obtained and analyzed.

UR - http://www.scopus.com/inward/record.url?scp=0037812398&partnerID=8YFLogxK

U2 - 10.1557/proc-744-m1.6

DO - 10.1557/proc-744-m1.6

M3 - Conference article

AN - SCOPUS:0037812398

SN - 0272-9172

VL - 744

SP - 25

EP - 28

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface

Abstract

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