X-ray diffraction study of InGaN/GaN superlattice interfaces

Kazuhide Kusakabe; Kazuhiro Ohkawa

doi:10.1116/1.1589514

X-ray diffraction study of InGaN/GaN superlattice interfaces

Kazuhide Kusakabe^*, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The superlattice interfaces of InGaN/GaN were studied by using X-ray diffraction analysis. The thermal annealing at 1000°C was subjected to samples to estimate their thermal stability. It was found that the effects of thermal annealing on the structural and optical properties were dependent on the strain conditions of InGaN/GaN multiple quantum wells.

Original language	English (US)
Pages (from-to)	1839-1843
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1589514
State	Published - 2003
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{5ea2368c463e42a2b321e4abff7cb8b7,

title = "X-ray diffraction study of InGaN/GaN superlattice interfaces",

abstract = "The superlattice interfaces of InGaN/GaN were studied by using X-ray diffraction analysis. The thermal annealing at 1000°C was subjected to samples to estimate their thermal stability. It was found that the effects of thermal annealing on the structural and optical properties were dependent on the strain conditions of InGaN/GaN multiple quantum wells.",

author = "Kazuhide Kusakabe and Kazuhiro Ohkawa",

year = "2003",

doi = "10.1116/1.1589514",

language = "English (US)",

volume = "21",

pages = "1839--1843",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - X-ray diffraction study of InGaN/GaN superlattice interfaces

AU - Kusakabe, Kazuhide

AU - Ohkawa, Kazuhiro

PY - 2003

Y1 - 2003

N2 - The superlattice interfaces of InGaN/GaN were studied by using X-ray diffraction analysis. The thermal annealing at 1000°C was subjected to samples to estimate their thermal stability. It was found that the effects of thermal annealing on the structural and optical properties were dependent on the strain conditions of InGaN/GaN multiple quantum wells.

AB - The superlattice interfaces of InGaN/GaN were studied by using X-ray diffraction analysis. The thermal annealing at 1000°C was subjected to samples to estimate their thermal stability. It was found that the effects of thermal annealing on the structural and optical properties were dependent on the strain conditions of InGaN/GaN multiple quantum wells.

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U2 - 10.1116/1.1589514

DO - 10.1116/1.1589514

M3 - Article

AN - SCOPUS:0141607958

SN - 1071-1023

VL - 21

SP - 1839

EP - 1843

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

X-ray diffraction study of InGaN/GaN superlattice interfaces

Abstract

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