Abstract
The superlattice interfaces of InGaN/GaN were studied by using X-ray diffraction analysis. The thermal annealing at 1000°C was subjected to samples to estimate their thermal stability. It was found that the effects of thermal annealing on the structural and optical properties were dependent on the strain conditions of InGaN/GaN multiple quantum wells.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1839-1843 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 4 |
| State | Published - Jul 2003 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)