Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS

H. C. Wen; P. Majhi; H. Alshareef; C. Huffman; K. Choi; P. Lysaght; R. Harris; H. Luan; B. H. Lee; N. Yamada; S. Wickramanayaka

doi:10.1109/VTSA.2005.1497098

Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS

H. C. Wen^*, P. Majhi, H. Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luan, B. H. Lee, N. Yamada, S. Wickramanayaka

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A novel material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.

Original language	English (US)
Title of host publication	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages	107-108
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2005.1497098
State	Published - 2005
Externally published	Yes
Event	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China Duration: Apr 25 2005 → Apr 27 2005

Publication series

Name	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	04/25/05 → 04/27/05

ASJC Scopus subject areas

General Engineering

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10.1109/VTSA.2005.1497098

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Wen, H. C., Majhi, P., Alshareef, H., Huffman, C., Choi, K., Lysaght, P., Harris, R., Luan, H., Lee, B. H., Yamada, N., & Wickramanayaka, S. (2005). Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 107-108). Article T67 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). https://doi.org/10.1109/VTSA.2005.1497098

Wen, H. C. ; Majhi, P. ; Alshareef, H. et al. / Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS. 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. pp. 107-108 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

@inproceedings{2f09b9e79e47471e9a3a407ed7c213eb,

title = "Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS",

abstract = "A novel material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.",

author = "Wen, {H. C.} and P. Majhi and H. Alshareef and C. Huffman and K. Choi and P. Lysaght and R. Harris and H. Luan and Lee, {B. H.} and N. Yamada and S. Wickramanayaka",

year = "2005",

doi = "10.1109/VTSA.2005.1497098",

language = "English (US)",

isbn = "078039058X",

series = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers",

pages = "107--108",

booktitle = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers",

note = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH ; Conference date: 25-04-2005 Through 27-04-2005",

}

Wen, HC, Majhi, P, Alshareef, H, Huffman, C, Choi, K, Lysaght, P, Harris, R, Luan, H, Lee, BH, Yamada, N & Wickramanayaka, S 2005, Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS. in 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers., T67, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, pp. 107-108, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Hsinchu, Taiwan, Province of China, 04/25/05. https://doi.org/10.1109/VTSA.2005.1497098

Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS. / Wen, H. C.; Majhi, P.; Alshareef, H. et al.
2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 107-108 T67 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS

AU - Wen, H. C.

AU - Majhi, P.

AU - Alshareef, H.

AU - Huffman, C.

AU - Choi, K.

AU - Lysaght, P.

AU - Harris, R.

AU - Luan, H.

AU - Lee, B. H.

AU - Yamada, N.

AU - Wickramanayaka, S.

PY - 2005

Y1 - 2005

N2 - A novel material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.

AB - A novel material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.

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U2 - 10.1109/VTSA.2005.1497098

DO - 10.1109/VTSA.2005.1497098

M3 - Conference contribution

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SN - 078039058X

SN - 9780780390584

T3 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

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BT - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers

T2 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH

Y2 - 25 April 2005 through 27 April 2005

ER -

Wen HC, Majhi P, Alshareef H, Huffman C, Choi K, Lysaght P et al. Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 107-108. T67. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). doi: 10.1109/VTSA.2005.1497098

Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS

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