Wideband integrated multiple laser chip on 1.55 μm heterostructure using controlled bandgap tuning by quantum well intermixing

V. Aimez; J. Beauvais; J. Beerens; H. S. Lim; B. S. Ooi

Wideband integrated multiple laser chip on 1.55 μm heterostructure using controlled bandgap tuning by quantum well intermixing

V. Aimez^*, J. Beauvais, J. Beerens, H. S. Lim, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Wideband integrated multiple laser chip on 1.55 μm heterostructure is studied using controlled bandgap tuning by quantum well intermixing (QWI). QWI is a key technology for advanced photonic integrated components fabrication, requiring integration of multiple bandgap values over a 150 nm range on a single substrate. It is shown that low energy ion implantation induced QWI is an efficient approach for post growth single step multiple bandgap tuning of high quality active and passive devices.

Original language	English (US)
Pages	238
Number of pages	1
State	Published - 2001
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001

Other

Other	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	05/6/01 → 05/11/01

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

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title = "Wideband integrated multiple laser chip on 1.55 μm heterostructure using controlled bandgap tuning by quantum well intermixing",

abstract = "Wideband integrated multiple laser chip on 1.55 μm heterostructure is studied using controlled bandgap tuning by quantum well intermixing (QWI). QWI is a key technology for advanced photonic integrated components fabrication, requiring integration of multiple bandgap values over a 150 nm range on a single substrate. It is shown that low energy ion implantation induced QWI is an efficient approach for post growth single step multiple bandgap tuning of high quality active and passive devices.",

author = "V. Aimez and J. Beauvais and J. Beerens and Lim, {H. S.} and Ooi, {B. S.}",

year = "2001",

language = "English (US)",

pages = "238",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - Wideband integrated multiple laser chip on 1.55 μm heterostructure using controlled bandgap tuning by quantum well intermixing

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

AU - Lim, H. S.

AU - Ooi, B. S.

PY - 2001

Y1 - 2001

N2 - Wideband integrated multiple laser chip on 1.55 μm heterostructure is studied using controlled bandgap tuning by quantum well intermixing (QWI). QWI is a key technology for advanced photonic integrated components fabrication, requiring integration of multiple bandgap values over a 150 nm range on a single substrate. It is shown that low energy ion implantation induced QWI is an efficient approach for post growth single step multiple bandgap tuning of high quality active and passive devices.

AB - Wideband integrated multiple laser chip on 1.55 μm heterostructure is studied using controlled bandgap tuning by quantum well intermixing (QWI). QWI is a key technology for advanced photonic integrated components fabrication, requiring integration of multiple bandgap values over a 150 nm range on a single substrate. It is shown that low energy ion implantation induced QWI is an efficient approach for post growth single step multiple bandgap tuning of high quality active and passive devices.

UR - http://www.scopus.com/inward/record.url?scp=0034800787&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034800787

SP - 238

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Wideband integrated multiple laser chip on 1.55 μm heterostructure using controlled bandgap tuning by quantum well intermixing

Abstract

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ASJC Scopus subject areas

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