TY - JOUR
T1 - Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation
AU - Kaloni, Thaneshwor P.
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/11/14
Y1 - 2013/11/14
N2 - Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.
AB - Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.
UR - http://hdl.handle.net/10754/315784
UR - http://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4830016
UR - http://www.scopus.com/inward/record.url?scp=84887984786&partnerID=8YFLogxK
U2 - 10.1063/1.4830016
DO - 10.1063/1.4830016
M3 - Article
SN - 0021-8979
VL - 114
SP - 184307
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 18
ER -