Abstract
We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.
Original language | English (US) |
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Pages (from-to) | 134109 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 13 |
DOIs | |
State | Published - Apr 5 2013 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)