TY - PAT
T1 - Wavy channel flexible thin-film-transistor on a flexible substrate and method of producing such a thin-film-transistor
AU - Hanna, Amir Nabil
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2018/9/13
Y1 - 2018/9/13
N2 - A method for producing a thin-film-transistor involves forming a flexible substrate on a rigid substrate, forming a plurality of fins and trenches in a structural layer arranged on the flexible substrate, forming a wavy gate layer, channel layer, source contact layer, and drain contact layer on each of the plurality of fins and each of a plurality of trenches of the structural layer, and removing the plurality of fins and trenches having the wavy gate, channel, source contact, and drain contact layers from the rigid substrate.
AB - A method for producing a thin-film-transistor involves forming a flexible substrate on a rigid substrate, forming a plurality of fins and trenches in a structural layer arranged on the flexible substrate, forming a wavy gate layer, channel layer, source contact layer, and drain contact layer on each of the plurality of fins and each of a plurality of trenches of the structural layer, and removing the plurality of fins and trenches having the wavy gate, channel, source contact, and drain contact layers from the rigid substrate.
UR - http://hdl.handle.net/10754/629846
UR - https://patents.google.com/patent/WO2018162993A1/en
M3 - Patent
M1 - WO2018162993A1
ER -