TY - GEN
T1 - Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits
AU - Hanna, Amir
AU - Hussain, Aftab M.
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/8/12
Y1 - 2015/8/12
N2 - We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.
AB - We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.
UR - http://hdl.handle.net/10754/621344
UR - http://ieeexplore.ieee.org/document/7175633/
UR - http://www.scopus.com/inward/record.url?scp=84957716846&partnerID=8YFLogxK
U2 - 10.1109/DRC.2015.7175633
DO - 10.1109/DRC.2015.7175633
M3 - Conference contribution
SN - 9781467381345
SP - 201
EP - 202
BT - 2015 73rd Annual Device Research Conference (DRC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -