Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

H. S. Djie; Y. Wang; B. S. Ooi; D. N. Wang; J. C.M. Hwang; X. M. Fang; Y. Wu; J. M. Fastenau; W. K. Liu; G. T. Dang; W. H. Chang

doi:10.1049/el:20072837

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

H. S. Djie^*, Y. Wang, B. S. Ooi, D. N. Wang, J. C.M. Hwang, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100nm.

Original language	English (US)
Pages (from-to)	33-35
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	1
DOIs	https://doi.org/10.1049/el:20072837
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing",

abstract = "The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100nm.",

author = "Djie, {H. S.} and Y. Wang and Ooi, {B. S.} and Wang, {D. N.} and Hwang, {J. C.M.} and Fang, {X. M.} and Y. Wu and Fastenau, {J. M.} and Liu, {W. K.} and Dang, {G. T.} and Chang, {W. H.}",

year = "2007",

doi = "10.1049/el:20072837",

language = "English (US)",

volume = "43",

pages = "33--35",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "1",

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TY - JOUR

T1 - Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

AU - Djie, H. S.

AU - Wang, Y.

AU - Ooi, B. S.

AU - Wang, D. N.

AU - Hwang, J. C.M.

AU - Fang, X. M.

AU - Wu, Y.

AU - Fastenau, J. M.

AU - Liu, W. K.

AU - Dang, G. T.

AU - Chang, W. H.

PY - 2007

Y1 - 2007

N2 - The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100nm.

AB - The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100nm.

UR - http://www.scopus.com/inward/record.url?scp=33846247941&partnerID=8YFLogxK

U2 - 10.1049/el:20072837

DO - 10.1049/el:20072837

M3 - Article

AN - SCOPUS:33846247941

SN - 0013-5194

VL - 43

SP - 33

EP - 35

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Abstract

ASJC Scopus subject areas

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