Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

Hang Zhou; Rui Deng; Yongfeng Li; Bin Yao; Zhanhui Ding; Qingxiao Wang; Yu Han; Tao Wu; Lei Liu

doi:10.1021/jp411128m

Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

Hang Zhou, Rui Deng, Yongfeng Li, Bin Yao, Zhanhui Ding, Qingxiao Wang, Yu Han, Tao Wu, Lei Liu

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

Original language	English (US)
Pages (from-to)	6365-6371
Number of pages	7
Journal	The Journal of Physical Chemistry C
Volume	118
Issue number	12
DOIs	https://doi.org/10.1021/jp411128m
State	Published - Mar 14 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the "12th Five-Year Plan" of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.

ASJC Scopus subject areas

Surfaces, Coatings and Films
General Energy
Physical and Theoretical Chemistry
Electronic, Optical and Magnetic Materials

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@article{ceafc360b4954cbeba4bf4f71946f220,

title = "Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example",

abstract = "We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified {"}forbidden{"} bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks {"}forbidden{"} band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. {\textcopyright} 2014 American Chemical Society.",

author = "Hang Zhou and Rui Deng and Yongfeng Li and Bin Yao and Zhanhui Ding and Qingxiao Wang and Yu Han and Tao Wu and Lei Liu",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the {"}12th Five-Year Plan{"} of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.",

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T1 - Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

AU - Zhou, Hang

AU - Deng, Rui

AU - Li, Yongfeng

AU - Yao, Bin

AU - Ding, Zhanhui

AU - Wang, Qingxiao

AU - Han, Yu

AU - Wu, Tao

AU - Liu, Lei

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the "12th Five-Year Plan" of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.

PY - 2014/3/14

Y1 - 2014/3/14

N2 - We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

AB - We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.

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JO - The Journal of Physical Chemistry C

JF - The Journal of Physical Chemistry C

IS - 12

ER -

Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

Abstract

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