Abstract
Water splitting using InGaN-based photocatalysts may have a great contribution in future renewable energy production systems. Among the most important parameters to solve are those related to substrate lattice-matching compatibility. Here, we directly grow InGaN nanowires (NWs) on a metallic Ti/Si template, for improving water splitting performance compared to a bare Si substrate. The open circuit potential of the epitaxially grown InGaN NWs on metallic Ti was almost two times that of those grown on Si substrate. The interfacial transfer resistance was also reduced significantly after introducing the metallic Ti interlayer. An applied-bias-photon-to-current conversion efficiency of 2.2% and almost unity Faradic efficiency for hydrogen generation were achieved using this approach. The InGaN NWs grown on Ti showed improved stability of hydrogen generation under continuous operation conditions, when compared to those grown on Si, emphasizing the role of the semiconductor-on-metal approach in enhancing the overall efficiency of water splitting catalysts.
Original language | English (US) |
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Pages (from-to) | 6922-6930 |
Number of pages | 9 |
Journal | Journal of Materials Chemistry A |
Volume | 6 |
Issue number | 16 |
DOIs | |
State | Published - 2018 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge financial support from Saudi Basic Industries Corporation (SABIC), Grant No. RGC/3/3068-01-01. BSO, TKN, CZ, and JWM acknowledge funding from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.