Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors—including crystal/substrate symmetry and energy consideration—necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.
|Original language||English (US)|
|Journal||Chemical Society Reviews|
|State||Published - 2022|
Bibliographical noteKAUST Repository Item: Exported on 2022-01-13
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079
Acknowledgements: L. J. L. and Y. Wan acknowledge the support from the University of Hong Kong. Y. S. acknowledges the support from the National Natural Science Foundation of China (Grant no. 61874074), Shenzhen Peacock Plan (Grant no. KQTD2016 053112042971). V. T. and J. H. F. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award no: OSR-2018-CARF/CCF-3079. C. P. C. acknowledges the support from Taiwan Semiconductor Manufacturing Company (TSMC).
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