Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

Yu Chuan Lin, Wenjing Zhang, Jing-Kai Huang, Keng Ku Liu, Yi Hsien Lee, Chi Te Liang, Chih Wei Chu, Lain-Jong Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

605 Scopus citations


Atomically thin molybdenum disulfide (MoS2) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS2 atomic thin layers is still lacking. Here we report that wafer-scale MoS2 thin layers can be obtained using MoO3 thin films as a starting material followed by a two-step thermal process, reduction of MoO3 at 500 °C in hydrogen and sulfurization at 1000 °C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS 2 films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.

Original languageEnglish (US)
Pages (from-to)6637-6641
Number of pages5
Issue number20
StatePublished - Oct 21 2012

ASJC Scopus subject areas

  • General Materials Science


Dive into the research topics of 'Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization'. Together they form a unique fingerprint.

Cite this