Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

Yaguang Wei, Wenzhuo Wu, Rui Guo, Dajun Yuan, Suman Das, Zhong Lin Wang

Research output: Contribution to journalArticlepeer-review

166 Scopus citations

Abstract

This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)3414-3419
Number of pages6
JournalNano Letters
Volume10
Issue number9
DOIs
StatePublished - Sep 8 2010
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): DMS0706436, CMMI 0403671
Acknowledgements: Research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), MANA WPI program from NIMS, Japan, and the Georgia Institute of Technology. The authors thank Dr. Jung-II Hong and Shu Xiang for technical assistance and discussions on XRD measurements.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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