Abstract
A study was conducted to fabricate wafer-level patterned and aligned polymer nanowire (PNW), micro- and nanotube arrays (PNT), which were created by exposing the polymer material to plasma etching. The approach for producing wafer-level aligned PNWs involved a one-step inductively coupled plasma (ICP) reactive ion etching process. The polymer nanowire array was fabricated in an ICP reactive ion milling chamber with a pressure of 10mTorr. Argon (Ar), O 2, and CF4 gases were released into the chamber as etchants at flow rates of 15 sccm, 10 sccm, and 40 sccm. Inert gasses, such as Ar-form positive ions were incorporated to serve as a physical component to assist in the material degradation process. One power source (400 W) was used to generate dense plasma from the input gases, while another power source applied a voltage of approximately 600V to accelerate the plasma toward the substrate.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2072-2076 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 21 |
| Issue number | 20 |
| DOIs | |
| State | Published - May 25 2009 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), and KAUST Global Research Partnership. We would like to thank Polysciences, Inc. for their generous contribution of PVDF polymer. Thanks to Prof. C. P. Wong and Rongwei Zhang for assistance in acquiring the FTIR data. Supporting Information is available online from Wiley InterScience or from the author.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.