A study was conducted to fabricate wafer-level patterned and aligned polymer nanowire (PNW), micro- and nanotube arrays (PNT), which were created by exposing the polymer material to plasma etching. The approach for producing wafer-level aligned PNWs involved a one-step inductively coupled plasma (ICP) reactive ion etching process. The polymer nanowire array was fabricated in an ICP reactive ion milling chamber with a pressure of 10mTorr. Argon (Ar), O 2, and CF4 gases were released into the chamber as etchants at flow rates of 15 sccm, 10 sccm, and 40 sccm. Inert gasses, such as Ar-form positive ions were incorporated to serve as a physical component to assist in the material degradation process. One power source (400 W) was used to generate dense plasma from the input gases, while another power source applied a voltage of approximately 600V to accelerate the plasma toward the substrate.