Voltage Gated Domain Wall Magnetic Tunnel Junction for Neuromorphic Computing Applications

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


We propose a novel spin-orbit torque (SOT) driven and voltage-gated domain wall motion (DWM)-based MTJ device and its application in neuromorphic computing. We show that by utilizing the voltage-controlled gating effect on the DWM, the access transistor can be eliminated. The device provides more control over individual synapse writing and shows highly linear synaptic behavior. The voltage-controlled DW- gating performance of the device in the crossbar array is quantified. The device long-term potentiation/depression (LTP/LTD) linearity dependence on material parameters such as DMI, at different temperatures, is evaluated for real-environment performance analysis. Furthermore, adopting the ideal and skyrmion leaky integrate and fire neuron models, we implement the spiking convolutional neural network for pattern recognition applications The DW-MTJ conductance was mapped to the weights of the SNN. When trained and tested on the CIFAR-10 data set, the architecture based on DW-MTJ synapse achieved accuracy of around 85%.

Original languageEnglish (US)
Title of host publication2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023
PublisherIEEE Computer Society
Number of pages6
ISBN (Electronic)9798350333466
StatePublished - 2023
Event23rd IEEE International Conference on Nanotechnology, NANO 2023 - Jeju City, Korea, Republic of
Duration: Jul 2 2023Jul 5 2023

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Conference23rd IEEE International Conference on Nanotechnology, NANO 2023
Country/TerritoryKorea, Republic of
CityJeju City

Bibliographical note

Publisher Copyright:
© 2023 IEEE.


  • Domain wall devices
  • MTJ
  • Neuromorphic computing
  • Skyrmions
  • SNN
  • Spintronics
  • Synapses
  • VCMA

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics


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