Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Stefaan De Wolf; Bénédicte Demaurex; Antoine Descoeudres; Christophe Ballif

doi:10.1103/PhysRevB.83.233301

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Stefaan De Wolf^*, Bénédicte Demaurex, Antoine Descoeudres, Christophe Ballif

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

Original language	English (US)
Article number	233301
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.83.233301
State	Published - Jun 7 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces",

abstract = "Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called {"}fast{"} states and (internal) surface reconstruction in bulk a-Si:H.",

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AU - De Wolf, Stefaan

AU - Demaurex, Bénédicte

AU - Descoeudres, Antoine

AU - Ballif, Christophe

PY - 2011/6/7

Y1 - 2011/6/7

N2 - Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

AB - Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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M1 - 233301

ER -

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Abstract

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