TY - JOUR
T1 - Vertically aligned carbon nanotube field-effect transistors
AU - Li, Jingqi
AU - Zhao, Chao
AU - Wang, Qingxiao
AU - Zhang, Qiang
AU - Wang, Zhihong
AU - Zhang, Xixiang
AU - Abutaha, Anas I.
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2012/10
Y1 - 2012/10
N2 - Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.
AB - Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.
UR - http://hdl.handle.net/10754/562335
UR - https://linkinghub.elsevier.com/retrieve/pii/S0008622312004794
UR - http://www.scopus.com/inward/record.url?scp=84863717707&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2012.05.049
DO - 10.1016/j.carbon.2012.05.049
M3 - Article
SN - 0008-6223
VL - 50
SP - 4628
EP - 4632
JO - Carbon
JF - Carbon
IS - 12
ER -