TY - GEN
T1 - Variable range hopping conduction in n-Si NWs with focus-ion-beam-induced amorphization
AU - Ke, Jian
AU - He, Hau
PY - 2010
Y1 - 2010
N2 - The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.
AB - The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.
UR - http://www.scopus.com/inward/record.url?scp=77951660519&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424990
DO - 10.1109/INEC.2010.5424990
M3 - Conference contribution
AN - SCOPUS:77951660519
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1144
EP - 1145
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -