Van der Waals Heteroepitaxial AZO/NiO/AZO/Muscovite (ANA/muscovite) Transparent Flexible Memristor

Van-Qui Le, Thi-Hien Do, Jose Ramon Duran Retamal, Pao-Wen Shao, Yu-Hong Lai, Wen-Wei Wu, Jr-Hau He, Yu-Lun Chueh, Ying-Hao Chu

Research output: Contribution to journalArticlepeer-review

132 Scopus citations

Abstract

Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio >105, stable endurance to 103 cycles and long retention time of 105 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 °C, which deliver a pathway for future applications in flexible transparent smart electronics.
Original languageEnglish (US)
Pages (from-to)322-329
Number of pages8
JournalNano Energy
Volume56
DOIs
StatePublished - Oct 23 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is supported by the Ministry of Science and Technology, Taiwan (Grant Nos. MOST 106–2119-M-009–011-MY3, 106–2628-E-009-001-MY2, 106–2923-M-009-003-MY2, 105–2633-M-007-003, 106–2112-M-007–028-MY3, 107–2923-E-007-002 -MY3, 107–2112-M-007–030-MY3, 06–2923-E-007-006-MY2, 105–2119-M-009-009, 107–3017-F-007-002 and the Center for Emergent Functional Matter Science of National Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The author W.W.W. acknowledges the support from Ministry of Science and Technology (MOST) in Taiwan (MOST-107–3017-F-009-002) and “Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University”from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan.

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