TY - JOUR
T1 - Valley polarization in magnetically doped single-layer transition-metal dichalcogenides
AU - Cheng, Yingchun
AU - Zhang, Qingyun
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2014/4/28
Y1 - 2014/4/28
N2 - We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.
AB - We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.
UR - http://hdl.handle.net/10754/552792
UR - http://link.aps.org/doi/10.1103/PhysRevB.89.155429
UR - http://www.scopus.com/inward/record.url?scp=84899769160&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.89.155429
DO - 10.1103/PhysRevB.89.155429
M3 - Article
SN - 1098-0121
VL - 89
JO - Physical Review B
JF - Physical Review B
IS - 15
ER -