Vacancy-induced ferromagnetism of MoS2 nanosheets

Liang Cai, Jingfu He, Qinghua Liu, Tao Yao, Lin Chen, Wensheng Yan*, Fengchun Hu, Yong Jiang, Yidong Zhao, Tiandou Hu, Zhihu Sun, Shiqiang Wei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

678 Scopus citations


Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo4+ 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 μB/Mo by the exchange interactions between sulfur vacancy and the Mo4+ 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.

Original languageEnglish (US)
Pages (from-to)2622-2627
Number of pages6
JournalJournal of the American Chemical Society
Issue number7
StatePublished - Feb 25 2015

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

ASJC Scopus subject areas

  • Catalysis
  • General Chemistry
  • Biochemistry
  • Colloid and Surface Chemistry


Dive into the research topics of 'Vacancy-induced ferromagnetism of MoS2 nanosheets'. Together they form a unique fingerprint.

Cite this