Vacancy-indium clusters in implanted germanium

Alexander I. Chroneos, R. Kube, Hartmut A. Bracht, Robin W. Grimes, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)38-40
Number of pages3
JournalChemical Physics Letters
Volume490
Issue number1-3
DOIs
StatePublished - Apr 2010

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Computing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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