Vacancy-indium clusters in implanted germanium

Alexander I. Chroneos; R. Kube; Hartmut A. Bracht; Robin W. Grimes; Udo Schwingenschlögl

doi:10.1016/j.cplett.2010.03.005

Vacancy-indium clusters in implanted germanium

Alexander I. Chroneos, R. Kube, Hartmut A. Bracht, Robin W. Grimes, Udo Schwingenschlögl

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	38-40
Number of pages	3
Journal	Chemical Physics Letters
Volume	490
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2010.03.005
State	Published - Apr 2010

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Computing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2010.03.005

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title = "Vacancy-indium clusters in implanted germanium",

abstract = "Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. {\textcopyright} 2010 Elsevier B.V. All rights reserved.",

author = "Chroneos, {Alexander I.} and R. Kube and Bracht, {Hartmut A.} and Grimes, {Robin W.} and Udo Schwingenschl{\"o}gl",

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AU - Chroneos, Alexander I.

AU - Kube, R.

AU - Bracht, Hartmut A.

AU - Grimes, Robin W.

AU - Schwingenschlögl, Udo

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Computing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.

PY - 2010/4

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N2 - Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

AB - Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

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EP - 40

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Vacancy-indium clusters in implanted germanium

Abstract

Bibliographical note

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