The bandgap engineering of graphene is a challenging task for its potential application. Forming unique structures such as nanoribbons or nanomeshes is an effective way to open up a bandgap in graphene. In this work, a graphene nanomesh (GNM) was prepared through UV-mediated oxidation of a graphene oxide (GO) film at atmosphere. Atomic force microscopy (AFM) was used to track the evolution of the surface morphology of GO during the irradiation. It was observed that a nanoporous network structure was progressively produced in the basal plane, which can be attributed to the fact that highly reactive oxygen species preferentially attack sp3 carbon-rich regions of the GO. In particular, the as-prepared GNM shows interesting semiconducting characteristics and photoluminescence (PL) phenomenon, which make it become a promising candidate for the use of electronics, optoelectronics, and biomedical engineering. Finally, the field-effect transistors (FETs) were fabricated using the as-prepared GNM as the active channel. The measured electrical characteristics indicate that the use of UV/O3 is an available choice to open the bandgap of graphene and tune its properties for optoelectronics or biomedical applications. © 2013 American Chemical Society.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank Dr. Yingchun Cheng (King Abdullah University of Science and Technology, Kingdom of Saudi Arabia) for the calculative parts. This work is supported by the China Nano 973 project (No. 2010CB933902), National Natural Scientific Fund of China (No. 81225010, 31100717), 863 project of China (2012AA022703), and Shanghai Science and Technology Fund (No. 13 nm1401500 and 11 nm0504200).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.