UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

Ahmed Ziani, Moussab Harb, Dalal Noureldine, Kazuhiro Takanabe

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We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.
Original languageEnglish (US)
Pages (from-to)096101
JournalAPL Materials
Issue number9
StatePublished - Sep 3 2015

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