UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Min Yung Ke; Tzu Chun Lu; Sheng Chieh Yang; Cheng Pin Chen; Yun Wei Cheng; Liang Yi Chen; Cheng Ying Chen; Jr Hau He; Jian Jang Huang

doi:10.1364/OE.17.022912

UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Min Yung Ke^*, Tzu Chun Lu, Sheng Chieh Yang, Cheng Pin Chen, Yun Wei Cheng, Liang Yi Chen, Cheng Ying Chen, Jr Hau He, Jian Jang Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO₂ thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg²⁺ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN pn device.

Original language	English (US)
Pages (from-to)	22912-22917
Number of pages	6
Journal	Optics Express
Volume	17
Issue number	25
DOIs	https://doi.org/10.1364/OE.17.022912
State	Published - Dec 7 2009
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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@article{32e4913d5cd34c60bc2d0df9be8f7488,

title = "UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers",

abstract = "In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN pn device.",

author = "Ke, {Min Yung} and Lu, {Tzu Chun} and Yang, {Sheng Chieh} and Chen, {Cheng Pin} and Cheng, {Yun Wei} and Chen, {Liang Yi} and Chen, {Cheng Ying} and He, {Jr Hau} and Huang, {Jian Jang}",

year = "2009",

month = dec,

day = "7",

doi = "10.1364/OE.17.022912",

language = "English (US)",

volume = "17",

pages = "22912--22917",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optical Society of America",

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TY - JOUR

T1 - UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

AU - Ke, Min Yung

AU - Lu, Tzu Chun

AU - Yang, Sheng Chieh

AU - Chen, Cheng Pin

AU - Cheng, Yun Wei

AU - Chen, Liang Yi

AU - Chen, Cheng Ying

AU - He, Jr Hau

AU - Huang, Jian Jang

PY - 2009/12/7

Y1 - 2009/12/7

N2 - In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN pn device.

AB - In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN pn device.

UR - http://www.scopus.com/inward/record.url?scp=72049127829&partnerID=8YFLogxK

U2 - 10.1364/OE.17.022912

DO - 10.1364/OE.17.022912

M3 - Article

C2 - 20052218

AN - SCOPUS:72049127829

SN - 1094-4087

VL - 17

SP - 22912

EP - 22917

JO - Optics Express

JF - Optics Express

IS - 25

ER -

UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Abstract

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