Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells

Stacy J. Kowsz; Erin C. Young; Benjamin P. Yonkee; Christopher D. Pynn; Robert M. Farrell; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.1364/OE.25.003841

Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells

Stacy J. Kowsz, Erin C. Young, Benjamin P. Yonkee, Christopher D. Pynn, Robert M. Farrell, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

Original language	English (US)
Pages (from-to)	3841-3849
Number of pages	9
Journal	Optics Express
Volume	25
Issue number	4
DOIs	https://doi.org/10.1364/OE.25.003841
State	Published - Feb 13 2017
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1121053); NSF Graduate Research Fellowship Program (DGE-1144085) The authors would like to thank the contributors to the open source Python color science package Colour, which is freely distributed under the New BSD License and was used to generate the CIE diagram and calculate CIE coordinates.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.25.003841

Cite this

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title = "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells",

abstract = "We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.",

author = "Kowsz, {Stacy J.} and Young, {Erin C.} and Yonkee, {Benjamin P.} and Pynn, {Christopher D.} and Farrell, {Robert M.} and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura",

note = "KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1121053); NSF Graduate Research Fellowship Program (DGE-1144085) The authors would like to thank the contributors to the open source Python color science package Colour, which is freely distributed under the New BSD License and was used to generate the CIE diagram and calculate CIE coordinates. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Kowsz, Stacy J.

AU - Young, Erin C.

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AU - Pynn, Christopher D.

AU - Farrell, Robert M.

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

N1 - KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1121053); NSF Graduate Research Fellowship Program (DGE-1144085) The authors would like to thank the contributors to the open source Python color science package Colour, which is freely distributed under the New BSD License and was used to generate the CIE diagram and calculate CIE coordinates. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2017/2/13

Y1 - 2017/2/13

N2 - We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

AB - We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

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ER -

Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells

Abstract

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