Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers

Yabing Qi*, Tissa Sajoto, Stephen Barlow, Eung Gun Kim, Jean Luc Brédas, Seth R. Marder, Antoine Kahn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

89 Scopus citations


(Chemical Equation Presented) Experimental and theoretical results are presented on the electronic structure of molybdenum tris[1,2- bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)3), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopant for organic molecular semiconductors. The electron affinity of the compound, determined via inverse photoemission spectroscopy, is 5.6 eV, which is 0.4 eV larger than that of the commonly used p-dopant F4-TCNQ. The LUMO level of Mo(tfd)3 is calculated to be delocalized over the whole molecule, which is expected to lead to low pinning potential. Efficient p-doping of a standard hole transport material (α-NPD) is demonstrated via measurements of Fermi level shifts and enhanced conductivity in α-NPD:1% Mo(tfd)3. Rutherford backscattering measurements show good stability of the three-dimensional Mo(tfd)3 molecule in the host matrix with respect to diffusion.

Original languageEnglish (US)
Pages (from-to)12530-12531
Number of pages2
JournalJournal of the American Chemical Society
Issue number35
StatePublished - Sep 9 2009
Externally publishedYes

ASJC Scopus subject areas

  • Catalysis
  • General Chemistry
  • Biochemistry
  • Colloid and Surface Chemistry


Dive into the research topics of 'Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers'. Together they form a unique fingerprint.

Cite this