Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors.

Keyphrases

• Oxygen Plasma 100%
• Top-gate Transistor 100%
• Native Oxide 100%
• Two Dimensional 75%
• High Mobility 75%
• Bi2O2Se 75%
• Equivalent Oxide Thickness 50%
• 2D Semiconductors 50%
• High Performance 25%
• High-resolution 25%
• Selective Oxidation 25%
• Nanoelectronics 25%
• Room Temperature 25%
• Channel Material 25%
• Gate Dielectric 25%
• Facile Approach 25%
• O2 Plasma 25%
• High-k Dielectric 25%
• Area Selective 25%
• Electronic Components 25%
• Interface Quality 25%
• High-k Gate Dielectrics 25%
• Low-power Electronics 25%
• Conformal Deposition 25%

Material Science

• Transistor 100%
• Amorphous Material 100%
• Oxide Compound 100%
• Dielectric Material 50%
• Nanoelectronics 16%
• Power Electronics 16%
• Electronic Component 16%
• Selective Oxidation 16%