Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments

Sagar Suthram; H. R. Harris; M. M. Hussain; C. Smith; C. D. Young; J. W. Yang; K. Mathews; K. Freeman; P. Majhi; H. H.H. Tseng; R. Jammy; Scott E. Thompson

doi:10.1109/VTSA.2008.4530848

Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments

Sagar Suthram^*, H. R. Harris, M. M. Hussain, C. Smith, C. D. Young, J. W. Yang, K. Mathews, K. Freeman, P. Majhi, H. H.H. Tseng, R. Jammy, Scott E. Thompson

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased irapactionization from strain induced bandgap narrowing at the drain-body junction.

Original language	English (US)
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	163-164
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530848
State	Published - 2008
Externally published	Yes
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China Duration: Apr 21 2008 → Apr 23 2008

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	04/21/08 → 04/23/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/VTSA.2008.4530848

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Suthram, S., Harris, H. R., Hussain, M. M., Smith, C., Young, C. D., Yang, J. W., Mathews, K., Freeman, K., Majhi, P., Tseng, H. H. H., Jammy, R., & Thompson, S. E. (2008). Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 163-164). Article 4530848 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530848

Suthram, Sagar ; Harris, H. R. ; Hussain, M. M. et al. / Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments. 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. pp. 163-164 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{dd0f542bd2484c9d9a9b1ae76af14560,

title = "Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments",

abstract = "Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased irapactionization from strain induced bandgap narrowing at the drain-body junction.",

author = "Sagar Suthram and Harris, {H. R.} and Hussain, {M. M.} and C. Smith and Young, {C. D.} and Yang, {J. W.} and K. Mathews and K. Freeman and P. Majhi and Tseng, {H. H.H.} and R. Jammy and Thompson, {Scott E.}",

year = "2008",

doi = "10.1109/VTSA.2008.4530848",

language = "English (US)",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "163--164",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

}

Suthram, S, Harris, HR, Hussain, MM, Smith, C, Young, CD, Yang, JW, Mathews, K, Freeman, K, Majhi, P, Tseng, HHH, Jammy, R & Thompson, SE 2008, Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530848, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 163-164, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 04/21/08. https://doi.org/10.1109/VTSA.2008.4530848

Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments. / Suthram, Sagar; Harris, H. R.; Hussain, M. M. et al.
2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 163-164 4530848 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Suthram, Sagar

AU - Harris, H. R.

AU - Hussain, M. M.

AU - Smith, C.

AU - Young, C. D.

AU - Yang, J. W.

AU - Mathews, K.

AU - Freeman, K.

AU - Majhi, P.

AU - Tseng, H. H.H.

AU - Jammy, R.

AU - Thompson, Scott E.

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N2 - Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased irapactionization from strain induced bandgap narrowing at the drain-body junction.

AB - Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased irapactionization from strain induced bandgap narrowing at the drain-body junction.

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BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

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ER -

Suthram S, Harris HR, Hussain MM, Smith C, Young CD, Yang JW et al. Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 163-164. 4530848. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530848

Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments

Abstract

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ASJC Scopus subject areas

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