Understanding Performance Limitation of Cu2CdSnS4 as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Prahelika Gayatri Naresh Kumar; P. Chandrasekar; Soumyaranjan Routray; Maykel Courel; Yehia Mahmoud Massoud

doi:10.1109/JSEN.2022.3205661

Understanding Performance Limitation of Cu2CdSnS4 as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Prahelika Gayatri Naresh Kumar, P. Chandrasekar, Soumyaranjan Routray, Maykel Courel, Yehia Mahmoud Massoud

Research output: Contribution to journal › Article › peer-review

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Abstract

There is a plethora of thin-film photovoltaic materials like CIGS, CIGSSe, CZTS, CZTSSe, etc. that are currently under research and are suitable for commercial use. In this study, a Cu2CdSnS4 (CCdTS) based thin-film solar cell is simulated using SILVACO TCAD to extract its optical and electrical properties such as efficiency, electric field, short circuit current, quantum efficiency, etc. The device is also optimized by variation of such physical parameters as thickness, doping concentration and material defects of the absorber layer. A remarkable efficiency of 21.2% is reached under the condition of defect absence, whereas an efficiency of 7.5% is obtained for the defect presence in the absorber layer. Changes in behavior of the solar cell with material defects following Gaussian and Tail type distribution are also analyzed and corresponding conclusions are drawn.

Original language	English (US)
Pages (from-to)	1-1
Number of pages	1
Journal	IEEE Sensors Journal
DOIs	https://doi.org/10.1109/JSEN.2022.3205661
State	Published - Sep 16 2022

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KAUST Repository Item: Exported on 2022-09-19

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https://repository.kaust.edu.sa/bitstream/10754/681568/1/Understanding_Performance_Limitation_of_Cu2CdSnS4_as_Photoactive_Layer_Physics_of_Defect_States_and_Recombination_Mechanisms.pdf

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title = "Understanding Performance Limitation of Cu2CdSnS4 as Photoactive Layer: Physics of Defect States and Recombination Mechanisms",

abstract = "There is a plethora of thin-film photovoltaic materials like CIGS, CIGSSe, CZTS, CZTSSe, etc. that are currently under research and are suitable for commercial use. In this study, a Cu2CdSnS4 (CCdTS) based thin-film solar cell is simulated using SILVACO TCAD to extract its optical and electrical properties such as efficiency, electric field, short circuit current, quantum efficiency, etc. The device is also optimized by variation of such physical parameters as thickness, doping concentration and material defects of the absorber layer. A remarkable efficiency of 21.2% is reached under the condition of defect absence, whereas an efficiency of 7.5% is obtained for the defect presence in the absorber layer. Changes in behavior of the solar cell with material defects following Gaussian and Tail type distribution are also analyzed and corresponding conclusions are drawn.",

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AU - Kumar, Prahelika Gayatri Naresh

AU - Chandrasekar, P.

AU - Routray, Soumyaranjan

AU - Courel, Maykel

AU - Massoud, Yehia Mahmoud

N1 - KAUST Repository Item: Exported on 2022-09-19

PY - 2022/9/16

Y1 - 2022/9/16

N2 - There is a plethora of thin-film photovoltaic materials like CIGS, CIGSSe, CZTS, CZTSSe, etc. that are currently under research and are suitable for commercial use. In this study, a Cu2CdSnS4 (CCdTS) based thin-film solar cell is simulated using SILVACO TCAD to extract its optical and electrical properties such as efficiency, electric field, short circuit current, quantum efficiency, etc. The device is also optimized by variation of such physical parameters as thickness, doping concentration and material defects of the absorber layer. A remarkable efficiency of 21.2% is reached under the condition of defect absence, whereas an efficiency of 7.5% is obtained for the defect presence in the absorber layer. Changes in behavior of the solar cell with material defects following Gaussian and Tail type distribution are also analyzed and corresponding conclusions are drawn.

AB - There is a plethora of thin-film photovoltaic materials like CIGS, CIGSSe, CZTS, CZTSSe, etc. that are currently under research and are suitable for commercial use. In this study, a Cu2CdSnS4 (CCdTS) based thin-film solar cell is simulated using SILVACO TCAD to extract its optical and electrical properties such as efficiency, electric field, short circuit current, quantum efficiency, etc. The device is also optimized by variation of such physical parameters as thickness, doping concentration and material defects of the absorber layer. A remarkable efficiency of 21.2% is reached under the condition of defect absence, whereas an efficiency of 7.5% is obtained for the defect presence in the absorber layer. Changes in behavior of the solar cell with material defects following Gaussian and Tail type distribution are also analyzed and corresponding conclusions are drawn.

UR - http://hdl.handle.net/10754/681568

UR - https://ieeexplore.ieee.org/document/9894282/

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DO - 10.1109/JSEN.2022.3205661

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JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

ER -

Understanding Performance Limitation of Cu2CdSnS4 as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Abstract

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