Understanding of passivation mechanism in heteroj unction c-Si solar cells

Michio Kondo*, Stefaan De Wolf, Hiroyuki Fujiwara

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations


In summary, we discussed how interface properties of a-Si:H/c-Si structures may determine the electronic passivation behavior in conjunction with the solar cell performance. The beneficial combination of a-Si:H(p,n,) and a-Si:H(i) for passivation is explained in terms of the defective interface with a doped layer and the excellent interface with an intrinsic layer. Post annealing treatments have been found to be a good tool to unravel the physical mechanism of passivation. The annealing studies demonstrate the need for a careful assessment of process temperature during c-Si/a-Si:H heterostructure device fabrication. For intrinsic film deposition, the deposition temperature should be sufficiently low to prevent epi-Si growth. For doped layer deposition, care has to be taken not to generate harmful defects already at moderate temperatures. The novel material a-SiO:H demonstrates the advantage of the prevention of harmful epitaxial growth and less optical absorption.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
PublisherMaterials Research Society
Number of pages11
ISBN (Print)9781605110363
StatePublished - 2008
Externally publishedYes
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 28 2008

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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