Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction

Jiangnan Dai; Jingwen Chen; Xiaohang Li; Jun Zhang; Hanling Long; Haochung Kuo; Yunbin He; Changqing Chen

doi:10.1364/OL.44.001944

Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction

Jiangnan Dai, Jingwen Chen, Xiaohang Li, Jun Zhang, Hanling Long, Haochung Kuo, Yunbin He, Changqing Chen

Research output: Contribution to journal › Article › peer-review

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Abstract

We report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.

Original language	English (US)
Pages (from-to)	1944
Journal	Optics Letters
Volume	44
Issue number	8
DOIs	https://doi.org/10.1364/OL.44.001944
State	Published - Apr 5 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01
Acknowledgements: Key Project of Chinese National Development Programs (2016YFB0400804); Key Laboratory of Infrared Imaging Materials and Detectors; Shanghai Institute of Technical Physics, Chinese Academy of Sciences (CAS) (IIMDKFJJ-17-09); National Natural Science Foundation of China (NSFC) (11574166, 61377034, 61675079, 61774065); KAUST Baseline (BAS/1/1664-01-01); KAUST Competitive Research (URF/1/3437-01-01); GCC Research Council (REP/1/3189-01-01); Director Fund of WNLO. The authors acknowledge the numerical calculations conducted by Prof. Zi-Hui Zhang at the Hebei University of Technology.

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@article{c901671a9ad04e3c86c1021045ae20de,

title = "Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction",

abstract = "We report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.",

author = "Jiangnan Dai and Jingwen Chen and Xiaohang Li and Jun Zhang and Hanling Long and Haochung Kuo and Yunbin He and Changqing Chen",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01 Acknowledgements: Key Project of Chinese National Development Programs (2016YFB0400804); Key Laboratory of Infrared Imaging Materials and Detectors; Shanghai Institute of Technical Physics, Chinese Academy of Sciences (CAS) (IIMDKFJJ-17-09); National Natural Science Foundation of China (NSFC) (11574166, 61377034, 61675079, 61774065); KAUST Baseline (BAS/1/1664-01-01); KAUST Competitive Research (URF/1/3437-01-01); GCC Research Council (REP/1/3189-01-01); Director Fund of WNLO. The authors acknowledge the numerical calculations conducted by Prof. Zi-Hui Zhang at the Hebei University of Technology.",

year = "2019",

month = apr,

day = "5",

doi = "10.1364/OL.44.001944",

language = "English (US)",

volume = "44",

pages = "1944",

journal = "Optics Letters",

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AU - Dai, Jiangnan

AU - Chen, Jingwen

AU - Li, Xiaohang

AU - Zhang, Jun

AU - Long, Hanling

AU - Kuo, Haochung

AU - He, Yunbin

AU - Chen, Changqing

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01 Acknowledgements: Key Project of Chinese National Development Programs (2016YFB0400804); Key Laboratory of Infrared Imaging Materials and Detectors; Shanghai Institute of Technical Physics, Chinese Academy of Sciences (CAS) (IIMDKFJJ-17-09); National Natural Science Foundation of China (NSFC) (11574166, 61377034, 61675079, 61774065); KAUST Baseline (BAS/1/1664-01-01); KAUST Competitive Research (URF/1/3437-01-01); GCC Research Council (REP/1/3189-01-01); Director Fund of WNLO. The authors acknowledge the numerical calculations conducted by Prof. Zi-Hui Zhang at the Hebei University of Technology.

PY - 2019/4/5

Y1 - 2019/4/5

N2 - We report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.

AB - We report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.

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JO - Optics Letters

JF - Optics Letters

IS - 8

ER -

Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction

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