We report on ultraviolet photovoltaic effects in a BiFeO 3/Nb-doped SrTiO 3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.
Bibliographical noteFunding Information:
This work is supported by the National Natural Science Foundation of China (No. 61078057, 51202195 and 51172183), the Natural Science Foundation of Shaanxi Province (No. 2012JQ8013), Aviation Foundation of China (No. 2011ZF53065), Graduate Student Seed Fund (Z2012165), and NPU Foundation for Fundamental Research (Nos. JC201155, JC20110273, and JC20120246).
ASJC Scopus subject areas
- Physics and Astronomy(all)