© 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|State||Published - Sep 2015|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.