Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (

Erin C. Young; Benjamin P. Yonkee; Feng Wu; Burhan K. Saifaddin; Daniel A. Cohen; Steve P. DenBaars; Shuji Nakamura; James S. Speck

doi:10.1016/j.jcrysgro.2015.02.081

Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (

Erin C. Young, Benjamin P. Yonkee, Feng Wu, Burhan K. Saifaddin, Daniel A. Cohen, Steve P. DenBaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

© 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.

Original language	English (US)
Pages (from-to)	389-392
Number of pages	4
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.081
State	Published - Sep 2015
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1016/j.jcrysgro.2015.02.081

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@article{3049520e8c1b46cdb27939647eae8d7f,

title = "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (",

abstract = "{\textcopyright} 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.",

author = "Young, {Erin C.} and Yonkee, {Benjamin P.} and Feng Wu and Saifaddin, {Burhan K.} and Cohen, {Daniel A.} and DenBaars, {Steve P.} and Shuji Nakamura and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

month = sep,

doi = "10.1016/j.jcrysgro.2015.02.081",

language = "English (US)",

volume = "425",

pages = "389--392",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (

AU - Young, Erin C.

AU - Yonkee, Benjamin P.

AU - Wu, Feng

AU - Saifaddin, Burhan K.

AU - Cohen, Daniel A.

AU - DenBaars, Steve P.

AU - Nakamura, Shuji

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015/9

Y1 - 2015/9

N2 - © 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.

AB - © 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.

UR - http://hdl.handle.net/10754/600122

UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024815001785

UR - http://www.scopus.com/inward/record.url?scp=84979959755&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.02.081

DO - 10.1016/j.jcrysgro.2015.02.081

M3 - Article

SN - 0022-0248

VL - 425

SP - 389

EP - 392

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (

Abstract

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