Ultrathin channels make transistors go faster

Thomas D. Anthopoulos

doi:10.1038/s41563-019-0489-y

Ultrathin channels make transistors go faster

Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.

Original language	English (US)
Pages (from-to)	1033-1034
Number of pages	2
Journal	Nature Materials
Volume	18
Issue number	10
DOIs	https://doi.org/10.1038/s41563-019-0489-y
State	Published - Sep 19 2019

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KAUST Repository Item: Exported on 2020-10-01

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10.1038/s41563-019-0489-y

https://repository.kaust.edu.sa/bitstream/10754/658598/1/Anthopoulos_N%26V%20Nat.%20Mater.%202019.pdf

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@article{f944e69803d249cb8db46c7251d33e1e,

title = "Ultrathin channels make transistors go faster",

abstract = "Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.",

author = "Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2019",

month = sep,

day = "19",

doi = "10.1038/s41563-019-0489-y",

language = "English (US)",

volume = "18",

pages = "1033--1034",

journal = "Nature Materials",

issn = "1476-1122",

publisher = "Nature Publishing Group",

number = "10",

}

TY - JOUR

T1 - Ultrathin channels make transistors go faster

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2019/9/19

Y1 - 2019/9/19

N2 - Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.

AB - Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.

UR - http://hdl.handle.net/10754/658598

UR - http://www.nature.com/articles/s41563-019-0489-y

UR - http://www.scopus.com/inward/record.url?scp=85072388094&partnerID=8YFLogxK

U2 - 10.1038/s41563-019-0489-y

DO - 10.1038/s41563-019-0489-y

M3 - Article

C2 - 31537940

SN - 1476-1122

VL - 18

SP - 1033

EP - 1034

JO - Nature Materials

JF - Nature Materials

IS - 10

ER -

Ultrathin channels make transistors go faster

Abstract

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