Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon

Nasir Alfaraj; Kuang Hui Li; Chun Hong Kang; Laurentiu Braic; Nicolae Catalin Zoita; Adrian Emil Kiss; Tien Khee Ng; Boon S. Ooi

doi:10.1117/12.2608070

Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon

Nasir Alfaraj, Kuang Hui Li, Chun Hong Kang, Laurentiu Braic, Nicolae Catalin Zoita, Adrian Emil Kiss, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.

Original language	English (US)
Title of host publication	Oxide-based Materials and Devices XIII
Publisher	SPIE
ISBN (Print)	9781510648753
DOIs	https://doi.org/10.1117/12.2608070
State	Published - Mar 5 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-21
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge the financial support of King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and the Romanian Ministry of Education and Research (18N/08.02.2019). The authors acknowledge the access of the Nanofabrication Core Lab as well as the Imaging and Characterization Core Lab facilities at KAUST

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10.1117/12.2608070

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@inproceedings{35c5ca90cf2f4fd29d8566820003d614,

title = "Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon",

abstract = "A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.",

author = "Nasir Alfaraj and Li, {Kuang Hui} and Kang, {Chun Hong} and Laurentiu Braic and Zoita, {Nicolae Catalin} and Kiss, {Adrian Emil} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2022-06-21 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge the financial support of King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and the Romanian Ministry of Education and Research (18N/08.02.2019). The authors acknowledge the access of the Nanofabrication Core Lab as well as the Imaging and Characterization Core Lab facilities at KAUST",

year = "2022",

month = mar,

day = "5",

doi = "10.1117/12.2608070",

language = "English (US)",

isbn = "9781510648753",

booktitle = "Oxide-based Materials and Devices XIII",

publisher = "SPIE",

}

TY - GEN

T1 - Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon

AU - Alfaraj, Nasir

AU - Li, Kuang Hui

AU - Kang, Chun Hong

AU - Braic, Laurentiu

AU - Zoita, Nicolae Catalin

AU - Kiss, Adrian Emil

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2022-06-21 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge the financial support of King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and the Romanian Ministry of Education and Research (18N/08.02.2019). The authors acknowledge the access of the Nanofabrication Core Lab as well as the Imaging and Characterization Core Lab facilities at KAUST

PY - 2022/3/5

Y1 - 2022/3/5

N2 - A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.

AB - A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.

UR - http://hdl.handle.net/10754/679189

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12002/2608070/Ultralow-power-deep-ultraviolet-photodetection-using-oxide-nitride-heterojunctions-integrated/10.1117/12.2608070.full

UR - http://www.scopus.com/inward/record.url?scp=85131224536&partnerID=8YFLogxK

U2 - 10.1117/12.2608070

DO - 10.1117/12.2608070

M3 - Conference contribution

SN - 9781510648753

BT - Oxide-based Materials and Devices XIII

PB - SPIE

ER -

Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon

Abstract

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