Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon

Nasir Alfaraj, Kuang Hui Li, Chun Hong Kang, Laurentiu Braic, Nicolae Catalin Zoita, Adrian Emil Kiss, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.
Original languageEnglish (US)
Title of host publicationOxide-based Materials and Devices XIII
ISBN (Print)9781510648753
StatePublished - Mar 5 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-21
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge the financial support of King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and the Romanian Ministry of Education and Research (18N/08.02.2019). The authors acknowledge the access of the Nanofabrication Core Lab as well as the Imaging and Characterization Core Lab facilities at KAUST


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