Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

Callum J. Docherty; Patrick Parkinson; Hannah J. Joyce; Ming-Hui Chiu; Chang-Hsiao Chen; Ming-Yang Lee; Lain-Jong Li; Laura M. Herz; Michael B. Johnston

doi:10.1021/nn5034746

Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

Callum J. Docherty, Patrick Parkinson, Hannah J. Joyce, Ming-Hui Chiu, Chang-Hsiao Chen, Ming-Yang Lee, Lain-Jong Li, Laura M. Herz, Michael B. Johnston

Research output: Contribution to journal › Article › peer-review

194 Scopus citations

Abstract

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

Original language	English (US)
Pages (from-to)	11147-11153
Number of pages	7
Journal	ACS Nano
Volume	8
Issue number	11
DOIs	https://doi.org/10.1021/nn5034746
State	Published - Nov 4 2014

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KAUST Repository Item: Exported on 2020-10-01

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title = "Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition",

abstract = "We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.",

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doi = "10.1021/nn5034746",

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T1 - Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

AU - Docherty, Callum J.

AU - Parkinson, Patrick

AU - Joyce, Hannah J.

AU - Chiu, Ming-Hui

AU - Chen, Chang-Hsiao

AU - Lee, Ming-Yang

AU - Li, Lain-Jong

AU - Herz, Laura M.

AU - Johnston, Michael B.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/11/4

Y1 - 2014/11/4

N2 - We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

AB - We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

UR - http://hdl.handle.net/10754/338540

UR - http://pubs.acs.org/doi/abs/10.1021/nn5034746

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DO - 10.1021/nn5034746

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SN - 1936-0851

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EP - 11153

JO - ACS Nano

JF - ACS Nano

IS - 11

ER -

Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

Abstract

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