To solve the von Neumann performance bottleneck, many kinds of magnetic logic devices are proposed. However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal−oxide−semiconductor (CMOS) logic, and moreover, cascading of the devices is difficult. Herein, instead, a new voltage-dominated magnetic logic-memory device is proposed, with switching time of 300 ps and power consumption of 150 fJ, representing ≈10 times improvement compared with CMOS logic on the same scale. The device has a reliable output ratio of >3000%, a low working magnetic field of
Bibliographical noteKAUST Repository Item: Exported on 2022-01-31
Acknowledgements: Y.P and Z.L. contributed equally to this work. This work was sponsored by National Key R&D Program of China (grant no.: 2017YFA0206202) and National Science Foundation of China (grant no.: 11674190). The authors would like to thank Professor Andy Godfrey for reading though the manuscript and providing useful suggestions.