Ultrabroad stimulated emission from quantum-dash laser

H. S. Djie*, C. L. Tan, B. S. Ooi, J. C.M. Hwang, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations


The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional InAsInAlGaAs quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.

Original languageEnglish (US)
Article number111116
JournalApplied Physics Letters
Issue number11
StatePublished - 2007
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by National Science Foundation under Grant No. 0725647, and the U.S. Army Research Laboratory through Lehigh-Army Cooperation Agreement, the Commonwealth of Pennsylvania, Department of Community and Economic Development.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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