Ultrabroad stimulated emission from quantum-dash laser

H. S. Djie; C. L. Tan; B. S. Ooi; J. C.M. Hwang; X. M. Fang; Y. Wu; J. M. Fastenau; W. K. Liu; G. T. Dang; W. H. Chang

doi:10.1063/1.2784969

Ultrabroad stimulated emission from quantum-dash laser

H. S. Djie^*, C. L. Tan, B. S. Ooi, J. C.M. Hwang, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional InAsInAlGaAs quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.

Original language	English (US)
Article number	111116
Journal	Applied Physics Letters
Volume	91
Issue number	11
DOIs	https://doi.org/10.1063/1.2784969
State	Published - 2007
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by National Science Foundation under Grant No. 0725647, and the U.S. Army Research Laboratory through Lehigh-Army Cooperation Agreement, the Commonwealth of Pennsylvania, Department of Community and Economic Development.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{9b639f93194b43f39673feecceadce59,

title = "Ultrabroad stimulated emission from quantum-dash laser",

abstract = "The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional InAsInAlGaAs quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.",

author = "Djie, {H. S.} and Tan, {C. L.} and Ooi, {B. S.} and Hwang, {J. C.M.} and Fang, {X. M.} and Y. Wu and Fastenau, {J. M.} and Liu, {W. K.} and Dang, {G. T.} and Chang, {W. H.}",

note = "Funding Information: This work was supported by National Science Foundation under Grant No. 0725647, and the U.S. Army Research Laboratory through Lehigh-Army Cooperation Agreement, the Commonwealth of Pennsylvania, Department of Community and Economic Development. ",

year = "2007",

doi = "10.1063/1.2784969",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "11",

}

TY - JOUR

T1 - Ultrabroad stimulated emission from quantum-dash laser

AU - Djie, H. S.

AU - Tan, C. L.

AU - Ooi, B. S.

AU - Hwang, J. C.M.

AU - Fang, X. M.

AU - Wu, Y.

AU - Fastenau, J. M.

AU - Liu, W. K.

AU - Dang, G. T.

AU - Chang, W. H.

N1 - Funding Information: This work was supported by National Science Foundation under Grant No. 0725647, and the U.S. Army Research Laboratory through Lehigh-Army Cooperation Agreement, the Commonwealth of Pennsylvania, Department of Community and Economic Development.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional InAsInAlGaAs quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.

AB - The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional InAsInAlGaAs quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.

UR - http://www.scopus.com/inward/record.url?scp=34548666419&partnerID=8YFLogxK

U2 - 10.1063/1.2784969

DO - 10.1063/1.2784969

M3 - Article

AN - SCOPUS:34548666419

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111116

ER -

Ultrabroad stimulated emission from quantum-dash laser

Abstract

Bibliographical note

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