Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

J. Mantey, W. Hsu, J. James, E. U. Onyegam, S. Guchhait, S. K. Banerjee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.
Original languageEnglish (US)
Pages (from-to)192111
JournalApplied Physics Letters
Issue number19
StatePublished - May 17 2013
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by a grant from KAUST and the NSF NNIN program.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


Dive into the research topics of 'Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer'. Together they form a unique fingerprint.

Cite this