Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

N. El-Atab; A. Nayfeh

doi:10.1149/07205.0073ecst

Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

N. El-Atab, A. Nayfeh

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

Original language	English (US)
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 17
Editors	J. M. Zavada, V. Chakrapani, S. Jang, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society, Inc.
Pages	73-79
Number of pages	7
Edition	5
ISBN (Electronic)	9781607687153
DOIs	https://doi.org/10.1149/07205.0073ecst
State	Published - 2016
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States Duration: May 29 2016 → Jun 2 2016

Publication series

Name	ECS Transactions
Number	5
Volume	72
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting
Country/Territory	United States
City	San Diego
Period	05/29/16 → 06/2/16

Bibliographical note

Publisher Copyright:
©The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

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10.1149/07205.0073ecst

Cite this

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title = "Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices",

abstract = "ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.",

author = "N. El-Atab and A. Nayfeh",

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El-Atab, N & Nayfeh, A 2016, Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices. in JM Zavada, V Chakrapani, S Jang, TJ Anderson & JK Hite (eds), Wide Bandgap Semiconductor Materials and Devices 17. 5 edn, ECS Transactions, no. 5, vol. 72, Electrochemical Society, Inc., pp. 73-79, Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting, San Diego, United States, 05/29/16. https://doi.org/10.1149/07205.0073ecst

Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices. / El-Atab, N.; Nayfeh, A.
Wide Bandgap Semiconductor Materials and Devices 17. ed. / J. M. Zavada; V. Chakrapani; S. Jang; T. J. Anderson; J. K. Hite. 5. ed. Electrochemical Society, Inc., 2016. p. 73-79 (ECS Transactions; Vol. 72, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

AU - El-Atab, N.

AU - Nayfeh, A.

N1 - Publisher Copyright: ©The Electrochemical Society.

PY - 2016

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N2 - ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

AB - ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

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ER -

Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

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