Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Here, we proposed fabricating ultra-small InGaN-based micro-light-emitting diodes (µLEDs). The selective p-GaN areas were intentionally passivated using a H2 plasma treatment and served as the electrical isolation regions to prevent the current from injecting into the InGaN quantum wells below. Three kinds of green µLEDs, two squircle shapes with widths of 5 and 4 µm and one circular shape with a diameter of 2.7 µm, were successfully realized. The currentvoltage characteristics indicate that the series resistance and the turn-on voltage increase as the dimension of the µLED decreases. This originates from the diffusion of the hydrogen atoms into the unexpected conductive p-GaN area. The light output power density and the calculated external quantum efficiency of the µLEDs from a 5-µm-squircle to a 2.7-µm-circle were enhanced by 10−20% when compared to 98 × 98 µm2 µLEDs that were fabricated using mesa etching
Original languageEnglish (US)
Pages (from-to)5092
JournalOptics Letters
Issue number20
StatePublished - Oct 5 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-10-06
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: The fabrication processes in this work were supported by Nanofabrication Core Labs in KAUST.

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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